Than Hong Phuc

Currently, power devices made of silicon (Si) is approaching fundamental performance limitations. New generations of power devices based on the wide-bandgap semiconductor, such as SiC, GaN, Ga₂O₃, diamond, are expected to replace of Si because of great advantages in size, weight and power consumption. The InGaP/GaAs heterojunction phototransistor (HPT) and GaAs solar cell were monolithically integrated on an HPT epitaxial wafer, and the battery-free operation of the photosensor was successfully demonstrated for energy harvesting. Radiation hardness of the energy-harvesting InGaP/GaAs HPT, which was confirmed after the high-energy electron irradiation, guarantees its space application.

Dr. Than Hong Phuc received B.Sci., M.Sci., and Ph.D. degree in engineering from the University of Electro – Communications, Tokyo, Japan, in 2011, 2013, and 2016, respectively. From 2016 to 2017, she was a device physicist at Fuji Electric Corporation in Matsumoto, Japan. In 2018, she joined the National Institute of Information and Communications Technology (NICT), Japan. Her research activities were in heteroepitaxial growth and characterization of compound semiconductors and development of Si VLSI technologies and devices. She joined Duy Tan University in Da Nang city in 2020 and is currently lecturer at Duy Tan University. Her present research interests include process technology and device design of high-power devices in Si, SiC and GaN, such as SBD, BJT, MOSFET, and IGBT.